![Technology / Microtechnology / Etching / Microelectromechanical systems / Reactive-ion etching / Nanowire / Indium gallium arsenide / MOSFET / Dry etching / Semiconductor device fabrication / Materials science / Chemistry Technology / Microtechnology / Etching / Microelectromechanical systems / Reactive-ion etching / Nanowire / Indium gallium arsenide / MOSFET / Dry etching / Semiconductor device fabrication / Materials science / Chemistry](https://www.pdfsearch.io/img/9b985d698025f1afe8fade1a240c84c0.jpg)
| Document Date: 2014-05-20 14:14:37 Open Document File Size: 720,95 KBShare Result on Facebook
City New York / N2 / / Company IntelliEpi Inc. / Microsystems Technology Laboratories / Scanning Electron Beam Laboratory / / Country United States / / / Facility Scanning Electron Beam Laboratory of MIT / Massachusetts Institute of Technology / / IndustryTerm architecture devices / optoelectronic devices / ceramic carrier wafer / process technology / gas flows / aspect ratio 3D devices / chemical etching / nm devices / optical device applications / / NaturalFeature As channel / / Organization National Science Foundation / Massachusetts Institute of Technology / NSF Center / / Person ION ETCHING / Jesús A. del Alamo / Xin Zhao / M. Passlack / / / Position Editor / / ProvinceOrState Delaware / Massachusetts / / Technology semiconductors / lasers / 3-D / Semiconductor Devices / dielectric / process technology / Digital Object Identifier / integrated circuits / / URL http /
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