| Document Date: 2014-05-20 14:14:37
Open Document File Size: 720,95 KBShare Result on Facebook
City New York / N2 / / Company IntelliEpi Inc. / Microsystems Technology Laboratories / Scanning Electron Beam Laboratory / / Country United States / / / Facility Scanning Electron Beam Laboratory of MIT / Massachusetts Institute of Technology / / IndustryTerm architecture devices / optoelectronic devices / ceramic carrier wafer / process technology / gas flows / aspect ratio 3D devices / chemical etching / nm devices / optical device applications / / NaturalFeature As channel / / Organization National Science Foundation / Massachusetts Institute of Technology / NSF Center / / Person ION ETCHING / Jesús A. del Alamo / Xin Zhao / M. Passlack / / / Position Editor / / ProvinceOrState Delaware / Massachusetts / / Technology semiconductors / lasers / 3-D / Semiconductor Devices / dielectric / process technology / Digital Object Identifier / integrated circuits / / URL http /
SocialTag |
IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 5, MAY[removed]Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs