The failure rates due due cosmic rays of biased high power semiconductors devices should be smaller than one failure per 109 hours and per cm2 silicon area (=1 FIT cm2) - Insulated gate bipolar transistor - Document - PDFSEARCH.IO

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Date: 2014-03-27 09:52:37 Radiation Neutron facilities Baryons Neutron Cosmic ray Power semiconductor device Diode Insulated gate bipolar transistor Paul Scherrer Institute Physics Power electronics Nuclear technology		The failure rates due due cosmic rays of biased high power semiconductors devices should be smaller than one failure per 109 hours and per cm2 silicon area (=1 FIT/cm2) Add to Reading List Source URL: www.ifjungo.ch Download Document from Source Website File Size: 44,78 KB Share Document on Facebook

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