The failure rates due due cosmic rays of biased high power semiconductors devices should be smaller than one failure per 109 hours and per cm2 silicon area (=1 FIT cm2) - Insulated gate bipolar transistor - Document - PDFSEARCH.IO

First Page	Meta Content
	The failure rates due due cosmic rays of biased high power semiconductors devices should be smaller than one failure per 109 hours and per cm2 silicon area (=1 FIT/cm2) Add to Reading List Document Date: 2014-03-27 09:52:37 Open Document File Size: 44,78 KB Share Result on Facebook City Davos / New York City / Jungfraujoch / / Company IBM / Solid State Electronics / H.R. Zeller ABB Semiconductors AG / / Currency USD / / / Facility Sphinx observatory / Proton Irradiation Facility / / IndustryTerm biased high power semiconductor devices / variable energy / energy spectrum / power semiconductor devices / silicon chip / energy / / Organization Paul Scherrer Institut / / Person Paul Scherrer / / Technology Bipolar Transistor / semiconductor devices / silicon chip / / SocialTag Radiation Neutron facilities Baryons Neutron Cosmic ray Power semiconductor device Diode Insulated gate bipolar transistor Paul Scherrer Institute Physics

The failure rates due due cosmic rays of biased high power semiconductors devices should be smaller than one failure per 109 hours and per cm2 silicon area (=1 FIT/cm2)Add to Reading List