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Semiconductor devices / Power electronics / Power semiconductor device / Insulated gate bipolar transistor / Diode / Transistor / Gallium nitride / Failure rate / Thyristor / Electrical engineering / Electromagnetism / Electronics
Date: 2014-03-27 09:52:19
Semiconductor devices
Power electronics
Power semiconductor device
Insulated gate bipolar transistor
Diode
Transistor
Gallium nitride
Failure rate
Thyristor
Electrical engineering
Electromagnetism
Electronics

International Foundation HFSJG Activity Report 2002 Name of research institute or organization: ABB Switzerland Ltd, Semiconductors

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