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Semiconductor devices / Power electronics / Power semiconductor device / Insulated gate bipolar transistor / Diode / Transistor / Gallium nitride / Failure rate / Thyristor / Electrical engineering / Electromagnetism / Electronics


International Foundation HFSJG Activity Report 2002 Name of research institute or organization: ABB Switzerland Ltd, Semiconductors
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Document Date: 2014-03-27 09:52:19

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City

Davos / New York City / /

Company

E+01 ABB Switzerland Ltd / Solid State Electronics / ABB Switzerland Ltd / /

Facility

Sphinx observatory / /

IndustryTerm

biased high power semiconductor devices / typical device applications / energy spectrum / power devices / power semiconductor devices / silicon chip / /

Person

Charles Findeisen / Thomas Stiasny / /

Position

project leader / biased high power semiconductor devices Project leader / /

Technology

Bipolar Transistor / one failed chip / semiconductor devices / silicon chip / /

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