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Electronics / Semiconductor devices / Insulated gate bipolar transistor / Power semiconductor device / H bridge / MOSFET / Transistor / Field-effect transistor / Inverter / Electrical engineering / Electromagnetism / Power electronics
Date: 2014-01-07 05:50:19
Electronics
Semiconductor devices
Insulated gate bipolar transistor
Power semiconductor device
H bridge
MOSFET
Transistor
Field-effect transistor
Inverter
Electrical engineering
Electromagnetism
Power electronics

© 2013 IEEE Proceedings of the 14th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL 2013), Salt Lake City, USA, June 23-26, 2013. Mixed MOSFET-IGBT Bridge for High-Efficient Medium-Frequency Dual-

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