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Electronics / Semiconductor devices / Insulated gate bipolar transistor / Power semiconductor device / H bridge / MOSFET / Transistor / Field-effect transistor / Inverter / Electrical engineering / Electromagnetism / Power electronics


© 2013 IEEE Proceedings of the 14th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL 2013), Salt Lake City, USA, June 23-26, 2013. Mixed MOSFET-IGBT Bridge for High-Efficient Medium-Frequency Dual-
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Document Date: 2014-01-07 05:50:19

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File Size: 4,65 MB

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Salt Lake City / /

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Diodes / Future Electronic Power Distribution Systems / International Power Electronics / Industrial Electronics / Power Electronics / Medium Voltage Drives / Applied Power Electronics / O. Apeldoorn* Power Electronic Systems Laboratory / ETH Zurich / ABB Switzerland AG / /

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United States / /

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mm IGBT bridge MOSFETs Snubber Diodes / Mixed bridge / Single-based bridge / Module-based bridge / mm MOSFETs IGBT bridge / J. Fort / MOSFET/IGBT bridge / Bridge Converter / Mixed MOSFET-IGBT Bridge / W Module-based bridge / /

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V LV / DC AC / AC TS / /

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Energy Society General / /

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DC / /

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semiconductor / mature semiconductor technology / semiconductors / semiconductor devices / Electronics Transformer Technology / Smart grid technologies / recombination / key enabling technology / /

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