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Electronics / International Electron Devices Meeting / Insulated gate bipolar transistor / Diode / Technology / Electronic engineering / Power electronics / MOSFET
Date: 2007-07-11 13:42:17
Electronics
International Electron Devices Meeting
Insulated gate bipolar transistor
Diode
Technology
Electronic engineering
Power electronics
MOSFET

HiSIM2.4.0: Advanced MOSFET Model for 45nm Technology Node and Beyond WCM, May 2007, Santa Clara M. Miura-Mattausch, N. Sadachika, M. Miyake, D. Navarro, T. Ezaki, H. J. Mattausch

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