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Electronics / International Electron Devices Meeting / Insulated gate bipolar transistor / Diode / Technology / Electronic engineering / Power electronics / MOSFET


HiSIM2.4.0: Advanced MOSFET Model for 45nm Technology Node and Beyond WCM, May 2007, Santa Clara M. Miura-Mattausch, N. Sadachika, M. Miyake, D. Navarro, T. Ezaki, H. J. Mattausch
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Document Date: 2007-07-11 13:42:17

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File Size: 1,03 MB

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City

Hiroshima / Santa Clara / /

Company

Siemens / /

Facility

Yoshida Hiroshima University / /

Organization

CMC / Hiroshima University / Hiroshima / /

ProgrammingLanguage

Verilog / /

Technology

Flash / simulation / Verilog / /

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