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APPLIED PHYSICS LETTERS 86, 033103 共2005兲 Probing the size and density of silicon nanocrystals in nanocrystal memory device applications Tao Feng,a兲 Hongbin Yu, Matthew Dicken, James R. Heath, and Harry A. Atwater
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Document Date: 2006-10-31 04:02:21

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Pasadena / Wiley / Nordheim / /

Currency

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Facility

American Institute of Physics Downloaded / Harry A. Atwater California Institute of Technology / American Institute of Physics / /

IndustryTerm

reflection high energy electron diffraction / metal / potential applications / low pressure chemical vapor deposition8 / nanocrystal floating gate memory devices / device applications / memory device / energy transfer / imaging / nanocrystal memory device applications / energy / /

Organization

California Institute of Technology / American Institute of Physics / National Science Foundation / National Aeronautics and Space Administration / /

Person

Tao Feng / James R. Heath / Si / Y. Cao / Harry A. Atwater / D. Katz / O. Millo / U. Banin / Matthew Dicken / Appl / /

ProvinceOrState

California / New York / /

PublishedMedium

APPLIED PHYSICS LETTERS / /

Technology

semiconductor / quantum dots / Semiconductor Devices / /

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http /

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