Back to Results
First PageMeta Content
Technology / Crystals / Polycrystalline silicon / Nanotechnology / Photoemission spectroscopy / Shallow trench isolation / Etching / Semiconductor device fabrication / Materials science / Microtechnology


Photon Factory Activity Report 2010 #28 Part BSurface and Interface 16A/2008U-004 Nano-scale characterization of poly-Si gate on high-k gate stack structures by
Add to Reading List

Document Date: 2012-01-30 04:32:45


Open Document

File Size: 79,08 KB

Share Result on Facebook

City

Tokyo / /

Company

Si Hf / /

Country

Japan / /

Currency

pence / /

/

Facility

The University of Tokyo / Photon Factory / /

IndustryTerm

conventional nano-scale devices / chemical imaging / Elemental devices / element-selective imaging / Site-specific chemical-state analyses / chemical states / metaloxide-semiconductor devices / energy-band discontinuity / chemical images / /

Organization

High Energy Accelerator Research Organization / University of Tokyo / Tokyo / Synchrotron Radiation Research Organization / Department of Applied Chemistry / /

Technology

semiconductor / Radiation / spectroscopy / semiconductors / photolithography / semiconductor devices / dielectric / /

SocialTag