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Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC Leif Johansson, Chao Xia, Jawad ul Hassan, Tihomir Iakimov, Alexei A. Zarharov, Somsakul Watcharinyanon, Rosi
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Document Date: 2014-04-16 06:40:56


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Facility

Linköping University / Lund University / /

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IndustryTerm

constant initial energy photoelectron angular distribution patterns / constant energy photoelectron angular distribution patterns / photon energy / lower binding energy / higher energy / buffer inert gas / electron kinetic energy / constant energy photoelectron angular distribution / above mentioned surface science tools / electron energy / energy / using a photon energy / /

OperatingSystem

Fermi / /

Organization

Linköping University / Department of Physics / Lund University / /

Person

Alexei A. Zarharov / Somsakul Watcharinyanon / Jawad Ul Hassan / Leif Johansson / Chao Xia / Tihomir Iakimov / Erik Janzén / Chariya Virojanadara / Rositza Yakimova / /

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Position

Author / representative / /

Technology

sublimation / X-ray / Spectroscopy / /

URL

http /

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