86 Technology focus: GaN HEMTs First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT Ultrasonic spray pyrolysis deposition has been used to create devices

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Date: 2015-01-23 09:10:57 Semiconductor devices Transistor High electron mobility transistor High-k dielectric Gallium nitride Aluminium gallium nitride Transconductance Chemistry Electronics Nitrides		86 Technology focus: GaN HEMTs First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT Ultrasonic spray pyrolysis deposition has been used to create devices Add to Reading List Source URL: www.semiconductor-today.com Download Document from Source Website File Size: 745,55 KB Share Document on Facebook

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