86 Technology focus: GaN HEMTs First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT Ultrasonic spray pyrolysis deposition has been used to create devices - Low-k dielectric - Document - PDFSEARCH.IO

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	86 Technology focus: GaN HEMTs First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT Ultrasonic spray pyrolysis deposition has been used to create devices Add to Reading List Document Date: 2015-01-23 09:10:57 Open Document File Size: 745,55 KB Share Result on Facebook Country Taiwan / / Currency pence / / Facility Feng Chia University / Industrial Technology Research Institute / National Cheng Kung University / / IndustryTerm metal-oxide-semiconductor high-electron-mobility transistors / carrier density / chemical analysis / carrier densities / low-pressure metal-organic chemical vapor deposition / / Organization Feng Chia University / National Cheng Kung University / Industrial Technology Research Institute / / Technology semiconductor / spectroscopy / 2014/January 2015 88 Technology / dielectric / 86 Technology / / URL www.semiconductor-today.com / http / SocialTag Semiconductor devices Transistor High electron mobility transistor High-k dielectric Gallium nitride Aluminium gallium nitride Transconductance Chemistry Electronics Nitrides

86 Technology focus: GaN HEMTs First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT Ultrasonic spray pyrolysis deposition has been used to create devicesAdd to Reading List