IBM / Applied Materials Inc. / Si Co / CAPPING LAYERS 729 TABLE I D EPOSITED Co T / Selective CVD Co / CVD Co / /
Country
United States / /
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chemical vapor / metal cap / metal cap layer / metal line parallel / chemical-vapor-deposition technique / metal cap process / metal-cap films / metal/dielectric cap interface / atmosphere comprising helium inert gas / chemical vapor deposition / nanoelectronic applications / chemical / technology node / metal lines / energy / /
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Ta / /
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S. Kawamura / /
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Editor / representative / /
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dielectric Manuscript / /
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Vermont / California / New York / /
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X-ray / dielectric / spectroscopy / Digital Object Identifier / Chemical vapor deposition / /
728 IEEE ELECTRON DEVICE LETTERS, VOL. 31, NO. 7, JULY 2010 Characterization of Selectively Deposited Cobalt Capping Layers: Selectivity and