New York / Tokyo / Kanagawa / Cambridge / Aichi / Soria / Atsugi / Gifu / /
Company
Musashino Electrical Communication Laboratory / GaInAsP Alloy Semiconductors / NTT LSI Laboratories / Nippon Telegraph and Telephone Corp. / NTT Atsugi Electrical Communications Laboratories / Public Corporation / /
Country
Japan / Spain / /
Currency
USD / /
Facility
Institute of Solar Energy / Nagoya University / Stanford University / Institute of Electrical / Polytechnic University of Madrid / Massachusetts Institute of Technology / /
IndustryTerm
gate-length device / chemical etchant / heterostructure devices / minority-carrier transport / present devices / frequency applications / gate metal deposition / energy difference / portant manufacturing advantages / energy / undoped-cap devices / recessed-gate device / telecommunications / Device processing / e-beam / gate-length devices / gate device / functional devices / extrinsic device / gate metal evaporation / /
OperatingSystem
Fermi / /
Organization
Japanese Society of Applied Physics / Japan Society of Applied Physics / Nagoya University / Massachusetts Institute of Technology / Department of Electrical Engineering and Computer Science / Institute of Solar Energy / American Physical Society / Polytechnic University of Madrid / Stanford University / Electrochemical Society / Institute of Electrical and Communication Engineers of Japan / /
Person
IEEE FET / TAKASHI MIZUTANI / JESUS A. DEL ALAMO / / /
Position
Research Assistant / Assistant Professor / Research Engineer / member / /
646 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 4, APRIL 1989 A Recessed-Gate In,.52A10.48As/n+-1%.53G%. 4 7 A ~ MIS-type FET