![Semiconductor devices / Compound semiconductors / Inorganic compounds / Multijunction photovoltaic cell / Band gap / Indium gallium arsenide / Gallium arsenide / Gallium nitride / Indium gallium phosphide / Chemistry / Solar cells / Energy conversion Semiconductor devices / Compound semiconductors / Inorganic compounds / Multijunction photovoltaic cell / Band gap / Indium gallium arsenide / Gallium arsenide / Gallium nitride / Indium gallium phosphide / Chemistry / Solar cells / Energy conversion](https://www.pdfsearch.io/img/bc4d64214734fa62373ad28d87e2e7ca.jpg) Date: 2010-05-11 12:43:58Semiconductor devices Compound semiconductors Inorganic compounds Multijunction photovoltaic cell Band gap Indium gallium arsenide Gallium arsenide Gallium nitride Indium gallium phosphide Chemistry Solar cells Energy conversion | | Basic considerations, growth and interfacial issues around III-V high-efficiency solar cells H.-J. Schimper1, U. Seidel1, U. Bloeck1, K. Schwarzburg1, W.E. McMahon2, I.G. Batyrev2, J.M. Olson2; S.B. Zhang2, T. Hannappel1Add to Reading ListSource URL: www.quantsol.orgDownload Document from Source Website File Size: 278,20 KBShare Document on Facebook
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