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Semiconductor devices / Compound semiconductors / Inorganic compounds / Multijunction photovoltaic cell / Band gap / Indium gallium arsenide / Gallium arsenide / Gallium nitride / Indium gallium phosphide / Chemistry / Solar cells / Energy conversion


Basic considerations, growth and interfacial issues around III-V high-efficiency solar cells H.-J. Schimper1, U. Seidel1, U. Bloeck1, K. Schwarzburg1, W.E. McMahon2, I.G. Batyrev2, J.M. Olson2; S.B. Zhang2, T. Hannappel1
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Document Date: 2010-05-11 12:43:58


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City

Golden / Berlin / /

Company

Germany 2 National Renewable Energy Laboratory / AES / Ge / /

Country

United States / /

IndustryTerm

carrier gas / metal organic chemical vapor deposition / /

Position

representative / /

ProvinceOrState

Colorado / /

Technology

mature Si-technology / semiconductors / chemical vapor deposition / /

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