Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics Sung Hun Jin, Jongmin Shin, In-Tak Cho, Sang Youn Han, Dong Joon Lee, Chi Hw

Source URL: rogers.matse.illinois.edu

• Carbon nanotubes
• Emerging technologies
• Space elevator
• Gallium nitride
• Transistor
• Field-effect transistor
• Power inverter

Stretchable Electronics: Stretchable InorganicSemiconductor Electronic Systems (Adv. Mater)

Source URL: rogers.matse.illinois.edu

• Electronic engineering
• Electronics manufacturing
• Light-emitting diode
• Signage
• Integrated circuits
• Printed circuit board
• Semiconductor device fabrication
• Three-dimensional integrated circuit
• Dynamic random-access memory
• Gallium nitride
• Silicon carbide

Wide bandgap nitride and oxide semiconductors: pulsed laser deposition, film characterization, and device applications Dong-Sing Wuu1,2 1 2

Source URL: www.thinfilms.sg

Brazilian Journal of Physics, vol. 34, no. 2B, June, Phase Separation and Ordering in Group-III Nitride Alloys L. K. Teles, M. Marques, L. M. R. Scolfaro, J. R. Leite,

Source URL: www.sbfisica.org.br

Technology Briefing & Scouting Report on “White Graphene”: Industrial Applications and Recent Research related to Hexagonal Boron Nitride and Boron Nitride Nanotubes TEM image of perfect hexagonal structure Image cou

Source URL: www.nanopro.biz

Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible 1 2

Source URL: www.attaccalite.com

MATEC Web of Conferences 4 0, ) DOI: m atecconf0 6  C Owned by the authors, published by EDP Sciences, 2016 Review of wide band-gap semiconductors technology

Source URL: www.matec-conferences.org

• Chemistry
• Electromagnetism
• Electronics
• Semiconductor devices
• Semiconductor device fabrication
• Gallium nitride
• Nitrides
• Transistor
• High-electron-mobility transistor
• Power semiconductor device
• Monolithic microwave integrated circuit
• Semiconductor

Brazilian Journal of Physics, vol. 28, no. 1, March, Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors

Source URL: www.sbfisica.org.br

LAAN-A-FT-E040 Determination of Interstitial Atomic Oxygen and Substitutional Atomic Carbon in Silicon Wafers and Hydrogen in Silicon Nitride Films on Silicon Wafers by FTIR

Source URL: www.ssi.shimadzu.com

RERTR 2015 ― 36th INTERNATIONAL MEETING ON REDUCED ENRICHMENT FOR RESEARCH AND TEST REACTORS OCTOBER 11-14, 2015 THE PLAZA HOTEL S EOUL, SOUTH KOREA

Source URL: www.rertr.anl.gov

• Thin film deposition
• Semiconductor device fabrication
• Atomic layer deposition
• Physical vapor deposition
• Vacuum deposition
• ALD
• Irradiation
• Titanium nitride
• Argonne National Laboratory
• Ion beam
• Coating