Monday, December 10, 2014 9:45－10:15 Growth of GaN on sapphire by low temperature deposited buffer layer and

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Date: 2014-12-12 12:13:15 Lighting Inorganic compounds Gallium nitride Isamu Akasaki Light-emitting diode Indium gallium nitride Aluminium nitride Sapphire Phosphor Chemistry Nitrides Optical materials		Monday, December 10, 2014 9:45－10:15 Growth of GaN on sapphire by low temperature deposited buffer layer and Add to Reading List Source URL: www.nobelprize.org Download Document from Source Website File Size: 2,87 MB Share Document on Facebook

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