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Lighting / Inorganic compounds / Gallium nitride / Isamu Akasaki / Light-emitting diode / Indium gallium nitride / Aluminium nitride / Sapphire / Phosphor / Chemistry / Nitrides / Optical materials


Monday, December 10, 2014 9:45－10:15 Growth of GaN on sapphire by low temperature deposited buffer layer and
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Document Date: 2014-12-12 12:13:15

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File Size: 2,87 MB

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City

Nitride / Nagoya / /

Company

Nintendo Co. Ltd. / DOCOMO CS Tohoku INC. / RCA / /

Country

Japan / /

/

Facility

Handmade MOVPE Reactor / Akasaki Research Center / University Furo-cho / Vapour-grown AlN Matsushita Research Institute / /

Organization

Graduate School / Nagoya Univ. / Vapour-grown AlN Matsushita Research Institute / Nagoya University / Akasaki Research Center / Meijo Univ. / /

Person

N. Holonyak Jr. / Isamu Akasaki / Hiroshi Amano / /

Product

LCD InGaN / /

Technology

cellular telephone / ATM / /

URL

http /

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