KAUST Repository High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

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Date: 2015-05-31 04:48:59 Zinc oxide Heterojunction Transistor Organic field-effect transistor Gallium nitride QSL 2DEG Atomic layer deposition Threshold voltage Chemistry Inorganic compounds Ultraviolet radiation		KAUST Repository High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices Add to Reading List Source URL: repository.kaust.edu.sa Download Document from Source Website File Size: 1,93 MB Share Document on Facebook

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