In2O3 / WILEY-VCH Verlag GmbH & Co. KGaA / Li Cornell High Energy Synchrotron Source Wilson Laboratory / Figure 6 / Indium Corporation / Creative Commons / 2DEG / /
Country
Netherlands / United Kingdom / Saudi Arabia / United States / Greece / / /
Facility
t.anthopoulos@ic.ac.uk Mr. Y.-H. Lin Dutch Polymer Institute / The Netherlands Dr. E. Stratakis Institute of Electronic Structure / Technology Department University of Crete Heraklion / Plastic Electronics Blackett Laboratory Imperial College / Greece Dr. L. Sygellou Institute of Chemical Engineering / Electrical Engineering Department Technological Educational Institute / Plastic Electronics Imperial College / Greece Dr. R. Li Cornell High Energy Synchrotron Source Wilson Laboratory / Engineering King Abdullah University of Science / Greece Dr. N. A. Hastas Physics Department Aristotle University of Thessaloniki Thessaloniki / /
IndustryTerm
energy levels / large-area electronics / solution-deposited metal oxide transistor channels / metal oxides / energy band diadielectric / sharp chemical interfaces / solution-processed metal oxide transistors / amine complex solutions / oxide devices / transparent metal oxide semiconductors / energy band diagram / aqueous solution / metal oxide structures / manufacturing processes / energy / metal / metal oxide transistors / metal oxide heterointerface systems / metalorganic chemical vapor deposition / suitable chemical doping / electronic applications / metal oxide films / material systems / manufacturing / binary metal oxides / low-temperature processing / unwanted chemical interactions / Energy quantization / quasi 2D electron gas-like systems / transistor technologies / measured energy levels / conventional devices / present systems / oxide material systems / metal oxide semiconductors / solution-grown metal oxide systems / metal oxide quasi-superlattices / thinfilm transistor technologies / metal oxidesIn2O3 / energy bandgaps / high carrier mobility / energy difference / energy increase / 2D electron gas / high charge carrier mobilities / metal-insulator-semiconductor / mobility thin-film transistor technologies / metal oxide hetero/multilayer structures / printing / transistor technology / precursor solution / transparent electronics / apparent free carrier concentration / ammine complex-based solution / inorganic transistor technologies / electronics / metal oxide layers / energy bandgap / metal oxide-based transistors / /
OperatingSystem
Fermi / /
Organization
R. Li Cornell High Energy Synchrotron Source Wilson Laboratory / Cornell University / N. A. Hastas Physics Department Aristotle University of Thessaloniki Thessaloniki / E. Stratakis Institute of Electronic Structure and Laser / L. Sygellou Institute / Y.-H. Lin Dutch Polymer Institute / Plastic Electronics Imperial College London London Royal School / Foundation for Research and Technology-Hellas / Physical Sciences and Engineering King Abdullah University of Science and Technology Thuwal / E. Kymakis Center of Materials Technology and Photonics / M. McLachlan Department of Materials / Technology-Hellas / Photonics and Electrical Engineering Department Technological Educational Institute / E. Stratakis Materials Science & Technology Department University of Crete Heraklion / Institute of Electronic Structure and Laser / Foundation of Research and Technology Hellas / A. Amassian Materials Science and Engineering Division of Physical Sciences / T. D. Anthopoulos Department of Physics / Dutch Polymer Institute / /
Person
H. Faber / Hendrik Faber / Thomas D. Anthopoulos / E. Stratakis / Martyn McLachlan / N. D. Treat / Emmanuel Kymakis / Hung Lin / Neil D. Treat / M. McLachlan / Crete Heraklion / A. Amassian / John G. Labram / Ruipeng Li / Kui Zhao / K. Zhao / N. A. Hastas / J. G. Labram / H. Lin Dutch / Emmanuel Stratakis / Aram Amassian / T. D. Anthopoulos / / /
KAUST Repository High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices