TF.1 Evaluation of Self-Heating and Hot Carrier Degradation of Poly-Si Thin-Film Transistors Using Charge Pumping Technique

First Page		Document Content
Date: 2014-10-10 02:44:39 Semiconductor device fabrication Semiconductors Semiconductor devices Hot carrier injection Negative bias temperature instability MOSFET Transistor Reliability Gate oxide Electronic engineering Electromagnetism Condensed matter physics		TF.1 Evaluation of Self-Heating and Hot Carrier Degradation of Poly-Si Thin-Film Transistors Using Charge Pumping Technique Add to Reading List Source URL: www.pskl.ust.hk Download Document from Source Website File Size: 297,28 KB Share Document on Facebook

	Quantum Communications using Semiconductor Devices Andrew Shields Toshiba Research Europe Ltd 208 Science Park, Milton Road, Cambridge CB40GZ. UK www.quantum.toshiba.co.uk * DocID: 1vqum - View Document
	Dear Colleagues: Semiconductor Research Corporation (SRC) Global Research Collaboration (GRC) is soliciting White Papers in the thrust area of Logic and Memory Devices. The white paper, limited to two pages and addressin DocID: 1uNQx - View Document
	Study of vacancy-type defects after post-growth annealing of undoped GaAs V. Bondarenko, K.Petters and R. Krause-Rehberg Introduction • SI GaAs  one of the most common materials for semiconductor devices DocID: 1tQeR - View Document
	E6: Optoelectronics Optoelectronics research area includes semiconductor based optoelectronic devices and materials as well DocID: 1sFF2 - View Document
	1 VI. Semiconductor Devices and Microelectronics 1. Bipolar Transistors Bipolar transistors in amplifiers 2. Field Effect Transistors DocID: 1sy2o - View Document