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Semiconductor device fabrication / Semiconductors / Semiconductor devices / Hot carrier injection / Negative bias temperature instability / MOSFET / Transistor / Reliability / Gate oxide / Electronic engineering / Electromagnetism / Condensed matter physics


TF.1 Evaluation of Self-Heating and Hot Carrier Degradation of Poly-Si Thin-Film Transistors Using Charge Pumping Technique
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Document Date: 2014-10-10 02:44:39


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Company

Solid-State Electronics / Agilent / /

Country

China / /

Currency

USD / /

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Event

Product Issues / /

Facility

Soochow University / /

IndustryTerm

trap energy distribution / limited applications / nickel nitrate solution / metal-induced crystallization / power law / power law dependence / trap state energy distribution / /

Organization

Soochow University / /

Person

Tan-Fu Lei / Tatsuya Shimoda / Yang Chen / Herman E. Maes / Ming-Wen Ma / Guido Groeseneken / Kuan-Lin Yeh / Lei Lu / Satoshi Inoue / Hsiao-Yi Lin / Wei-Cheng Chen / Hiroyuki Ohshima / Shen-De Wang / Rudi Bellens / G. Kamarinos / V / /

Position

D. J. / /

Product

HC injection / region / /

PublishedMedium

Journal of Applied Physics / /

Technology

crystallization / simulation / /

SocialTag