![Semiconductor devices / Semiconductors / Thin-film transistor / Zinc oxide / Atomic layer deposition / Annealing / Active-matrix liquid crystal display / Heat treating / Transistor / Chemistry / Chemical elements / Post-transition metals Semiconductor devices / Semiconductors / Thin-film transistor / Zinc oxide / Atomic layer deposition / Annealing / Active-matrix liquid crystal display / Heat treating / Transistor / Chemistry / Chemical elements / Post-transition metals](https://www.pdfsearch.io/img/94c75b5fed217fc109112d8d6d032b1c.jpg) Date: 2014-10-10 02:44:38Semiconductor devices Semiconductors Thin-film transistor Zinc oxide Atomic layer deposition Annealing Active-matrix liquid crystal display Heat treating Transistor Chemistry Chemical elements Post-transition metals | | IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 8, AUGUST[removed]A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-FilmAdd to Reading ListSource URL: www.pskl.ust.hkDownload Document from Source Website File Size: 922,18 KBShare Document on Facebook
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