| Document Date: 2014-10-10 02:44:38
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Company ACS / Corning Inc. / Optoelectronics Technologies / Partner State Key Laboratory / / / Facility Partner State Key Laboratory / Hong Kong University of Science / / IndustryTerm thermal processing / gas-impermeable titanium / gas-permeable indiumtin oxide / gas-permeable gate-stack / gas-permeability / plasma-enhanced chemical vapor deposition / carrier transport / gas-permeable gatestacks / gas-permeable cover / metal-oxide semiconductor / interface carrier concentration / gas-permeable silicon oxide / / Organization Hong Kong University of Science and Technology / Hong Kong / Department of Electronic and Computer Engineering / / Person Lei Lu / A. Chin / / Position Editor / / Technology semiconductor / radio frequency / Digital Object Identifier / dielectric / chemical vapor deposition / / URL http /
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IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 8, AUGUST[removed]A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film