P-22: Top-Gate Thin Film Transistor with ZnO:N Channel Fabricated by Room Temperature RF Magnetron Sputtering

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Date: 2014-10-10 03:11:50 Zinc oxide Atomic layer deposition Oxide thin film transistor Sputter deposition Thin-film transistor Center of Excellence in Nanotechnology at AIT Chemistry Thin film deposition Ultraviolet radiation		P-22: Top-Gate Thin Film Transistor with ZnO:N Channel Fabricated by Room Temperature RF Magnetron Sputtering Add to Reading List Source URL: www.pskl.ust.hk Download Document from Source Website File Size: 2,17 MB Share Document on Facebook