OCVD 法によるダイヤモンド p-i-n ダイオードのキャリア寿命測定 Carrier lifetime in diamond p-i-n diode by Open Circuit Voltage Decay method (OCVD) ○ A. Traore1, A. Nakajima1, T. Makino1, D. Kuwaba

Source URL: bukko.bk.tsukuba.ac.jp

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NANO LETTERS p-Channel, n-Channel Thin Film Transistors and p−n Diodes Based on Single Wall Carbon Nanotube Networks

Source URL: rogers.matse.illinois.edu

• Emerging technologies
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SISPAD 2012, September 5-7, 2012, Denver, CO, USA Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode Gesualdo Donnarummaa,b, Vassil Palankovskia,b

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Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization Vinay Kabra, Lubna Aamir* and M. M. Malik Full Research Paper Address:

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Physical Sciences-Applied Physical Sciences Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode Deep Jariwala,1 Vinod K. Sangwan,1 Chung-Chiang Wu,1 Pradyumna L. Prabhumirashi,1 Michael L. Geier,1 Tobin J. Marks,

Source URL: arxiv.org

COMPUTER SIMULATION OF LOW-ENERGY HIGH-CURRENT ELECTRON BEAM DYNAMICS IN A LONG PLASMA-FILLED DIODE 1 A.V. Agafonov1, V.P. Tarakanov2 P.N. Lebedev Physical Institute of RAS, Leninsky Prosp. 53, Moscow, GSP-1, 119991, Rus

Source URL: vant.kipt.kharkov.ua

Applied Laser Technology Institute Japan Atomic Energy AgencyKizaki Tsuruga-shi，Fukui-ken，Japan P h o n e ： +81-（0）Facsimile： +81-（0）

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OPERATION OF THE MOSCOW MESON FACTORY LINAC PROTON INJECTOR WITH THE PULSE DURATION OF THE BEAM CURRENT UP TO 150 µS A.S.Belov, V.N.Zubetz, V.I.Derbilov, S.K.Esin, E.S.Nikulin, P.N.Ostroumov, O.T.Frolov, V.P.Yakushev In

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