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Physics / Electromigration / Integrated circuits / Electronic design / Semiconductors / Semiconductor device fabrication / Physics of failure / Failure modes of electronics / Electronic engineering / Electromagnetism / Electronic design automation


Document Date: 2006-04-19 03:35:04

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File Size: 592,91 KB

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City

London / Science Reports / San Jose / /

Company

Robert Bosch GmbH / VLSI Electronics / Academic Press Ltd. / /

Continent

Asia / Europe / /

Country

United States / /

Currency

USD / /

/

Facility

University of Notre Dame / University of Technology Electronic Design / terminal T1 T3 / Terminal Connections / Terminal Currents / /

IndustryTerm

metal / applied current-density verification tool / metal wire / point tool / higher electromigration activation energy levels / metal structures meets power requirements / electromigration activation energy / layout decompaction tools / reliability-critical applications / metal deposition / silicon chip / individual metal ions / positive metal ions / individual metal structures / metal-via layer / metal ions / automotive applications / activation energy / /

Organization

2nd Author Dresden University of Technology Electronic Design / University of Notre Dame / /

Person

Lee / Jens Lienig / W. R. Self / Al Al / Sullivan / J. R. Black / /

Position

Author / physicist / 1st Author / conductor / Hunter / Major / General / empirical model / T. D. / /

ProgrammingLanguage

DC / /

ProvinceOrState

New York / /

PublishedMedium

Elsevier / /

Region

South Pacific / /

Technology

detailed router / silicon chip / lithography / simulation / Terms Algorithms / Integrated Circuits / CAD / /

URL

www.ifte.de / http /

SocialTag