CS_ad_213x282mm_semiconductor_today_feb14.indd

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Date: 2015-02-27 10:59:53 Indium gallium nitride 2DEG Indium nitride Heterojunction Electron mobility High electron mobility transistor Metalorganic vapour phase epitaxy Transistor Aluminium gallium nitride Chemistry Nitrides Gallium nitride		CS_ad_213x282mm_semiconductor_today_feb14.indd Add to Reading List Source URL: www.semiconductor-today.com Download Document from Source Website File Size: 630,59 KB Share Document on Facebook

	Unusual strategies for using indium gallium nitride grown on siliconfor solid-state lighting Hoon-sik Kima,1, Eric Bruecknerb,1, Jizhou Songc,1, Yuhang Lid,e, Seok Kima, Chaofeng Lud,f, Joshua Sulking, Kent Choqu DocID: 1shg7 - View Document
	Paper Title (use style: paper title) DocID: 1qzVz - View Document
	Research Article www.acsami.org Water-Soluble Thin Film Transistors and Circuits Based on Amorphous Indium−Gallium−Zinc Oxide Sung Hun Jin,*,†,¶ Seung-Kyun Kang,⊥,¶ In-Tak Cho,§,¶ Sang Youn Han,⊥,# Ha Uk Ch DocID: 1prZf - View Document
	80 Technology focus: LEDs Long-wavelength N-polar indium gallium nitride LEDs MOVPE process achieves red emission with 633.4nm wavelength, longer than other –c-plane InGaN LEDs, according to researchers. DocID: 1kCrF - View Document
	82 Technology focus: Nitride materials Indium surfactant for higher hole concentration in gallium nitride Ammonia-based MBE process suppresses compensating donor effects. DocID: 1kBFw - View Document