Back to Results
First PageMeta Content
Semiconductor device fabrication / Superhard materials / Transistors / Ceramic materials / Atomic layer deposition / High-k dielectric / Ruthenium(IV) oxide / Silicon dioxide / Titanium nitride / Chemistry / Matter / Electronic engineering


Photon Factory Activity Report 2009 #27 Part BSurface and Interface 2C/2008S2003 Interfacial reactions for Ru metal-electrode/HfSiON gate stack structures studied
Add to Reading List

Document Date: 2010-12-27 22:22:07

Open Document

File Size: 506,21 KB

Share Result on Facebook

City

Tokyo / /

Country

Japan / /

Currency

pence / /

/

Facility

The University of Tokyo / Photon Factory / /

IndustryTerm

metal / metal electrode / metal/high-k interface / Chemical reaction / Metal/high-k gate stack structure / free energy / gas ambient / /

Organization

University of Tokyo / Tokyo / High Energy Accelerator Research Organization / Japan Science and Technology Agency / Synchrotron Radiation Research Organization / Department of Applied Chemistry / /

Technology

semiconductor / radiation / spectroscopy / dielectric / /

SocialTag