Journal of Crystal Growth–313 Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals}numerical model and qualitative considerations a

First Page		Document Content
Date: 2003-02-27 08:19:22 Crystals Semiconductor growth Crystallographic defects Crystallography Dislocation Crystal growth Silicon Czochralski process Crystal Chemistry Materials science Matter		Journal of Crystal Growth–313 Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals}numerical model and qualitative considerations a Add to Reading List Source URL: www.mhd-crystal.lv Download Document from Source Website File Size: 50,00 KB Share Document on Facebook

	Laboratory of Supramolecular Crystallography, Institute for Protein Research Staff Prof. Atsushi NAKAGAWA, Assist. Prof. Eiki YAMASHITA, Spec. Appoint. Assist. Prof. Akifumi HIGASHIURA DocID: 1vr5V - View Document
	Published on WebComparisons of NMR Spectral Quality and Success in Crystallization Demonstrate that NMR and X-ray Crystallography Are Complementary Methods for Small Protein Structure Determination DocID: 1uEH7 - View Document
	List of 8th LCS Participants No NAME AFFILIATION Position Marat Akchurin Institute of Crystallography of the Russian Academy of Sciences, Moscow, Russia Senior Scientist DocID: 1uDYa - View Document
	COMMISSION ON POWDER DIFFRACTION INTERNATIONAL UNION OF CRYSTALLOGRAPHY http://www.iucr.org/iucr-top/comm/cpd/ NEWSLETTER No. 25, July 2001 http://www.iucr.org/iucr-top/comm/cpd/Newsletters/ DocID: 1uC3s - View Document
	RESEARCH HIGHLIGHTS SPECTROSCOPY © 2006 Nature Publishing Group http://www.nature.com/naturemethods Together at last: crystallography DocID: 1uAWd - View Document