University Graduate Center / Norwegian University of Science / /
IndustryTerm
lowest energy levels / present device / gate metal / band gap energy / self-consistent solution / long-channel device / analytical solution / electron energy quantization / long-channel solution / carrier contribution / gate-to-gate energy barrier / harmonic oscillator solutions / square-well solutions / subband energy levels / analytical 2D solution / minimum barrier energy / energy level quantization perpendicular / selfconsistent solution / higher energy levels / deep energy / carrier fluxes / energy barrier maximum / n-channel device / gate-to-gate barrier energy profile / perturbed flat-well solutions / 2D electron gas / /
OperatingSystem
Fermi / /
Organization
Norwegian Research Council / University Graduate Center / European Commission / Universitat Rovira i Virgili / Norwegian University of Science and Technology / /
Product
2D / /
ProvinceOrState
Vermont / New York / /
PublishedMedium
Physica Scripta / Lecture Notes in Computer Science / /
Precise 2D Compact Modeling of Nanoscale DG MOSFETs Based on Conformal Mapping Techniques T. A. Fjeldly *, S. Kolberg* and B. Iñiguez** * UniK – University Graduate Center, Norwegian University of Science and Technol