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Drain Induced Barrier Lowering
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1	2015 20th IEEE European Test Symposium (ETS) ! New Drain Current Model for Nano-Meter MOS Transistors On-Chip Threshold Voltage Test Add to Reading List Source URL: www.ridgetopgroup.com Language: English - Date: 2015-08-06 17:54:54 Electronic engineering Electrical engineering Electromagnetism Integrated circuits Semiconductor devices Electronic design Logic families Electronic circuits MOSFET Drain-induced barrier lowering CMOS Threshold voltage
2	Precise 2D Compact Modeling of Nanoscale DG MOSFETs Based on Conformal Mapping Techniques T. A. Fjeldly , S. Kolberg and B. Iñiguez** * UniK – University Graduate Center, Norwegian University of Science and Technol Add to Reading List Source URL: www.nsti.org Language: English - Date: 2012-06-27 17:07:44 Drain Induced Barrier Lowering Technology Threshold voltage Field-effect transistor Multigate device Work function Short-channel effect Charge carriers Transistors Electrical engineering Physics MOSFET
3	Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa, T. Sekigawa, T. Tsutsumi*, M. Hioki, E. Suzuki, and H. Koike * Electroinformatics Group, Add to Reading List Source URL: www.nsti.org Language: English - Date: 2011-11-18 13:54:24 Electrical engineering Semiconductors Short-channel effect Transistor Field-effect transistor Electron mobility Drain Induced Barrier Lowering Channel length modulation Power MOSFET Electronic engineering Technology MOSFET
4	A computationally efficient method for analytical calculation of potentials in undoped symmetric DG SOI MOSFET Oana Cobianu * and Manfred Glesner Institute of Microelectronic Systems, Darmstadt University of Technology Add to Reading List Source URL: www.nsti.org Language: English - Date: 2012-06-27 17:11:59** Electronic engineering MOSFET Threshold voltage Field-effect transistor Drain Induced Barrier Lowering Transistor Gate oxide Electrical engineering Semiconductor devices Technology
5	Spectra Journal_FINAL.pdf Add to Reading List Source URL: www.seas.virginia.edu Language: English - Date: 2014-04-04 11:55:04 Nanomaterials MOSFET Subthreshold slope Threshold voltage Graphene Field-effect transistor Drain Induced Barrier Lowering Transistor Leakage Electrical engineering Electromagnetism Physics
6	IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, VOL. 22, NO. 10, OCTOBER[removed]A Compact Transregional Model for Digital CMOS Circuits Operating Near Threshold Add to Reading List Source URL: www.async.caltech.edu Language: English - Date: 2014-09-24 17:59:20 Electromagnetism Electronic design Logic families MOSFET Drain Induced Barrier Lowering Threshold voltage Field-effect transistor CMOS IC power supply pin Electronic engineering Electrical engineering Integrated circuits
7	PDF Document Add to Reading List Source URL: www.nsti.org Language: English - Date: 2006-06-09 07:22:26 Short-channel effect UNIK Multigate device Field-effect transistor Drain Induced Barrier Lowering Threshold voltage MOSFET
8	PDF Document Add to Reading List Source URL: www.nsti.org Language: English - Date: 2006-06-09 07:22:03 Threshold voltage Doping Electromagnetism Drain Induced Barrier Lowering Halo: Combat Evolved Transistor model Electrical engineering Games Reverse short-channel effect
9	A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs Jerry G. Fossum University of Florida Gainesville, FL[removed]http://www.soi.tec.ufl.edu) Add to Reading List Source URL: www.nsti.org Language: English - Date: 2010-03-19 15:18:44 Technology MOSFET Drain Induced Barrier Lowering Silicon-germanium Field-effect transistor Bipolar junction transistor IC power supply pin Threshold voltage Transistor model Integrated circuits Electrical engineering Electronic engineering
10	Present Status and Future Direction of BSIM SOI Model for High Performance/Low-Power/RF Application Samuel K. H. Fung, Pin Su, Wan Hui, Chenming Hu IBM Microelectronics, Semiconductor Research and Development Center ( Add to Reading List Source URL: www.nsti.org Language: English* - Date: 2010-03-19 15:20:38 Chenming Hu Electromagnetism Drain Induced Barrier Lowering Leakage Soi Electrical engineering BSIM MOSFET

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