Back to Results
First PageMeta Content



Physical Sciences-Applied Physical Sciences Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode Deep Jariwala,1 Vinod K. Sangwan,1 Chung-Chiang Wu,1 Pradyumna L. Prabhumirashi,1 Michael L. Geier,1 Tobin J. Marks,
Add to Reading List

Document Date: 2013-10-23 20:01:52


Open Document

File Size: 1,08 MB

Share Result on Facebook

City

Evanston / Diode / /

Country

United States / /

/

Facility

Northwestern University / /

IndustryTerm

field-effect devices / representative device / electronic and optoelectronic technologies / heterostructure devices / photon energy / lower doping/majority carrier concentration / free carrier generation / far-reaching applications / logic applications / field-effect tunneling devices / electronics / final device / opposite carrier type contact / 2D transition metal dichalcogenides / e-beam / bulk semiconductor devices / random network / heterojunction device / carrier separation / /

Organization

Department of Medicine / Department of Materials Science and Engineering / Northwestern University / Department of Chemistry / /

Position

representative / /

ProvinceOrState

SL-MoS2 / Illinois / /

Technology

semiconductor / semiconductors / lasers / electronic and optoelectronic technologies / semiconductor devices / optoelectronics / field-effect transistor / recombination / integrated circuits / /

SocialTag