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Nanomaterials / MOSFET / Subthreshold slope / Threshold voltage / Graphene / Field-effect transistor / Drain Induced Barrier Lowering / Transistor / Leakage / Electrical engineering / Electromagnetism / Physics


Spectra Journal_FINAL.pdf
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Document Date: 2014-04-04 11:55:04


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City

Vienna / /

Company

Ge / Computational Electronics / Intel / /

Country

Nicaragua / /

Currency

USD / /

Facility

University of Virginia / tunnel Mark Cheung School / tunnel FET / /

IndustryTerm

energy levels / energy barrier / energy grid 8QLYHUVLW\ / source conduction energy levels / energy grid points / function algorithm / low-power applications / energy grid matrices / energy-efficient electronics switches / self-energy matrices / energy broadening / high carrier mobility / taneous solution / channel valence energy levels / carrier mobility / metal / metal-oxide semiconductors / conduction band energy / potential energy / monolithic graphene device / low-power electronics / material systems / electronics / graphene electronics / valence band energy / computing / /

NaturalFeature

Varying channel / /

OperatingSystem

Linux / Fermi / /

Organization

Mark Cheung School of Engineering and Applied Science / Honor Society / NSF Nanosystems Engineering Research Center for Advanced Self-Powered Systems of Integrated Sensors and Varying / National Science Foundation / Eta / University of Virginia / Go Club / ESWB / Thomas Jefferson High School for Science and Technology / Department of Electrical and Computer Engineering Keywords / Center for Diversity / /

Person

Mark Cheung / Avik Ghosh / Redwan Sajjad / /

/

Position

core leader of the Solar Car Team / the vicepresident / president / author / Professor / faculty adviser / adviser / /

ProvinceOrState

Virginia / Ontario / /

PublishedMedium

Nature Nanotechnology / /

Technology

semiconductor / Linux / integrated circuits / semiconductors / function algorithm / dielectric / http / simulation / integrated circuit / /

URL

http /

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