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Molecular beam epitaxy / Semiconductor growth / Chemistry / Surface diffusion / Kinetic Monte Carlo / Stranski–Krastanov growth / Physics / Science / Materials science / Thin film deposition / Statistical mechanics


Competing roughening mechanisms in strained heteroepitaxy: a fast kinetic Monte Carlo study Chi-Hang Lam1 , Chun-Kin Lee1 , and Leonard M. Sander2 1 arXiv:cond-mat[removed]v2 5 Jul 2002
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Document Date: 2004-05-12 01:29:30


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Company

Ge / Randall Laboratory / /

Country

United States / /

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pence / /

Facility

University of Michigan / Hong Kong Polytechnic University / /

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energy barrier / acceptance-rejection algorithm / chemical interactions / equilibrium surface energy / elastic energy / random topmost site / strain energy / possible advanced optoelectronic applications / energy / /

Organization

Hong Kong Polytechnic University / Department of Applied Physics / University of Michigan / Ann Arbor / Michigan Center for Theoretical Physics / /

Person

Hung Hom / /

Product

2D / /

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Michigan / /

Technology

quantum dots / simulation / acceptance-rejection algorithm / ATG / /

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