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Electrical engineering / Semiconductors / Short-channel effect / Transistor / Field-effect transistor / Electron mobility / Drain Induced Barrier Lowering / Channel length modulation / Power MOSFET / Electronic engineering / Technology / MOSFET


Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa*, T. Sekigawa*, T. Tsutsumi**, M. Hioki*, E. Suzuki*, and H. Koike* * Electroinformatics Group,
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Document Date: 2011-11-18 13:54:24

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Company

LG / /

Country

Japan / /

Currency

pence / /

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Facility

Meiji University / Nanoelectronics Research Institute National Institute of Advanced Industrial Science / terminal Operation Mode / terminal DG MOSFETs / /

IndustryTerm

200nm long device / carrier velocity saturation / 50nm long device / technology node proceeds / carrier velocity-saturation effect / 50nm-long device / nm long devices / carrier velocity / energy / /

NaturalFeature

Si channel / /

Organization

Meiji University / Nanoelectronics Research Institute National Institute of Advanced Industrial Science and Technology / Department of Computer Science / School of Science and Technology / /

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Technology

bipolar transistor / simulation / VSAT / dielectric / /

URL

www.nsti.org / /

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