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Semiconductor devices / MOSFET / Integrated circuits / Gate oxide / Field-effect transistor / Depletion region / Self-aligned gate / Transistor / Drain Induced Barrier Lowering / Electronic engineering / Electronics / Electrical engineering
Date: 2002-06-24 01:04:15
Semiconductor devices
MOSFET
Integrated circuits
Gate oxide
Field-effect transistor
Depletion region
Self-aligned gate
Transistor
Drain Induced Barrier Lowering
Electronic engineering
Electronics
Electrical engineering

AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS

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