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Semiconductor devices / MOSFET / Integrated circuits / Gate oxide / Field-effect transistor / Depletion region / Self-aligned gate / Transistor / Drain Induced Barrier Lowering / Electronic engineering / Electronics / Electrical engineering


AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS
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Document Date: 2002-06-24 01:04:15

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File Size: 39,33 KB

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