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Electronics / Semiconductor device fabrication / Electronic engineering / Transistors / High-k dielectric / Thin-film transistor / Equivalent oxide thickness / Chemical vapor deposition / Thermal oxidation / Chemistry / Semiconductors / Technology


AMDp2 - 5 High-Performance and Low-Temperature-Compatible Solid Phase Crystallized Polycrystalline Silicon Thin Film Transistors Using Thermal Oxide Buffered Aluminum Oxide as Gate Dielectric
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Document Date: 2014-10-10 03:11:48


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File Size: 906,65 KB

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Company

High Performance Low Temperature Metal / Agilent / /

Currency

pence / /

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Facility

Computer Engineering The Hong Kong University of Science / /

IndustryTerm

system-on-panel applications / Electron devices / metal layer / possible solutions / active layer crystalline technology optimization / low-pressure chemical vapor deposition / metal induced crystallization / /

NaturalFeature

Technology Clear Water Bay / /

Organization

Department of Electronic / Hong Kong University of Science and Technology Clear Water Bay / Hoi-Sing Kwok* Center for Display Research / /

Person

A. G. Lewis / Wei Zhou / Sing Kwok / W. Wu / T. J. King / Jacob Ho / /

Position

Major / /

ProgrammingLanguage

DC / /

Technology

semiconductor / crystallization / laser / Ebd / LTPS technologies / Dielectric / chemical vapor deposition / /

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