Advances in Remote Plasma Sources for Cleaning 300 mm and Flat Panel CVD Systems

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Date: 2008-11-17 11:26:52 Materials science Technology Plasma etching Plasma Chemical vapor deposition Etching Sputtering Ion source Ultra-high-purity steam for oxidation and annealing Semiconductor device fabrication Plasma processing Chemistry		Advances in Remote Plasma Sources for Cleaning 300 mm and Flat Panel CVD Systems Add to Reading List Source URL: www.mksinst.com Download Document from Source Website File Size: 629,47 KB Share Document on Facebook

	LETTER pubs.acs.org/NanoLett Softened Elastic Response and Unzipping in Chemical Vapor Deposition Graphene Membranes Carlos S. Ruiz-Vargas,† Houlong L. Zhuang,‡ Pinshane Y. Huang,† Arend M. van der Zande,§ Shivank DocID: 1rWdj - View Document
	Carbon nanotube thin films Esko I. Kauppinen Aalto University School of Science, Department of Applied Physics PO Box 15100, FIAalto, FINLAND Contact e-mail: Indium is currently used as ITO DocID: 1rjvP - View Document
	www.advmat.de REVIEW Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and DocID: 1r6Vw - View Document
	MATEC Web of Conferences 30, DOI: m atec conf 0 8 C Owned by the authors, published by EDP Sciences, 2015 Deposition and Characterization of the Titanium-Based Coating by a DocID: 1qUVd - View Document
	Letter pubs.acs.org/NanoLett Local Atomic and Electronic Structure of Boron Chemical Doping in Monolayer Graphene Liuyan Zhao,† Mark Levendorf,‡ Scott Goncher,§ Theanne Schiros,∥ Lucia Pálová,§ DocID: 1qGdV - View Document