Semiconductor International / Scott Bailey / MKS Instruments Inc. / STMicroelectronics / Michael Goulding / SEMICONDUCTOR MANUFACTURING / /
Event
Environmental Issue / /
Facility
SiO2 reactor / /
IndustryTerm
low flow-rate applications / selective chemical reaction / remote plasma-clean hardware / chemical vapor deposition chambers / process tool / extended flow-range product / gas costs / chemical attack / electromagnetic energy / higher gas flow rates / gas stream / gas baffle / gas emissions / chemical process / higher-cleaning gas flow / deposition systems / plasma-clean technology / reactive gas ions / chemical vapor deposition / reactive gas generators / toroidal plasma technology / maximum gas flow rate / toroidal plasma reactive gas generator / input gas / chemical reaction / chemical-etching process / considerable thermal energy / plasma cleaning systems / manufacturing semiconductors / power supply technology / gas mixtures / activation energy / process tools / microwave hardware / undesirable exhaust gas emissions / firstgeneration technology / /
Organization
ASTRON / /
Person
William Holber / Xing Chen / Daniel E. Rosner / Paul Loomis / H. Donald Allendorf / /
Position
representative / /
Product
ASTRONe / /
ProvinceOrState
California / /
PublishedMedium
Semiconductor International / /
Technology
power supply technology / semiconductors / plasma-clean technology / toroidal plasma technology / spectroscopy / firstgeneration technology / microwave / radio frequency / recombination / CVD / chemical vapor deposition / integrated circuit / microwave technology / /
Advances in Remote Plasma Sources for Cleaning 300 mm and Flat Panel CVD Systems