A Unified Process-Based Compact Model for Scaled PD SOI and Bulk-Si MOSFETs Jerry G. Fossum University of Florida Gainesville, FL[removed]http: www.soi.tec.ufl.edu) - Electronic effect - Document - PDFSEARCH.IO

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Date: 2010-03-19 15:18:44 Technology MOSFET Drain Induced Barrier Lowering Silicon-germanium Field-effect transistor Bipolar junction transistor IC power supply pin Threshold voltage Transistor model Integrated circuits Electrical engineering Electronic engineering		A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs Jerry G. Fossum University of Florida Gainesville, FL[removed]http://www.soi.tec.ufl.edu) Add to Reading List Source URL: www.nsti.org Download Document from Source Website File Size: 181,78 KB Share Document on Facebook

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