acs_NL_nl-2011-02708d 1..5

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Date: 2011-12-15 14:23:18 Chemistry Semiconductor device fabrication Microtechnology Materials science Technology Etching Nanowire Dry etching Gallium arsenide Wafer Chemical milling Photolithography		acs_NL_nl-2011-02708d 1..5 Add to Reading List Source URL: rogers.matse.illinois.edu Download Document from Source Website File Size: 685,16 KB Share Document on Facebook

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	Etching mechanism of the single-step through-silicon-via dry etch using SF6/C4F8 chemistry Zihao Ouyang, D. N. Ruzic, Mark Kiehlbauch, Alex Schrinsky, and Kevin Torek Citation: Journal of Vacuum Science & Technology A 32 DocID: 1l7f1 - View Document
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	Dry Etch and Plasma System 1. Scope 1.1 This document provides operating procedures and requirements to etch silicon or silica with gas plasma system. DocID: 138iY - View Document